BU810 |
RFQ for BU810 Required Field |
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| Technical/Catalog Information | BU810 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Transistor Type | NPN - Darlington |
| Voltage - Collector Emitter Breakdown (Max) | 400V |
| Current - Collector (Ic) (Max) | 7A |
| Power - Max | 75W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 20mA, 2A |
| Frequency - Transition | - |
| Current - Collector Cutoff (Max) | 1mA |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 (Straight Leads) |
| Packaging | Tube |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | BU810 BU810 497 7198 5 ND 49771985ND 497-7198-5 |
| Product | Manufacturers | Pack | D/C | ||||||||||
| BU810 | - | TO-220 | 05+ |
The BU810 is a Multiepitaxial Planar NPN Transistor in TO-220 package. It is intended for use in high frequency and efficency converters, switching regulators and motor control.
Typical Application |
Features |
| · HORIZONTAL DEFLECTION FOR MONOCHROME TVs· GENERAL PURPOSE SWITCHING | · SGS-THOMSON PREFERRED SALESTYPE· NPN DARLINGTON· LOW BASE-DRIVE REQUIREMENTS·FAST SWITCHING SPEED· INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE |
| Symbol | Parameter | Value | Unit |
| VCBO | Collector-Base Voltage (IE = 0) | 600 | V |
| VCEO | Collector-Emit ter Voltage (IB = 0) | 400 | V |
| VEBO | Emitter-Base Voltage (IC = 0) | 5 | V |
| IC | Collector Current | 7 | A |
| ICM | Collector Peak Current (tp < 5 ms) | 10 | A |
| IB | Base Current | 2 | A |
| Ptot | Total Dissipation at Tcase 25 | 75 | W |
| Tstg | Storage Temperature | -65 to 150 | |
| Tj | Max. Operating Junction Temperature | 150 |
